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1 edition of Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices found in the catalog.

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

by Eric Garfunkel

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  • 1 Currently reading

Published by Springer Netherlands, Imprint, Springer in Dordrecht .
Written in English


About the Edition

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Edition Notes

Other titlesProceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997
Statementedited by Eric Garfunkel, Evgeni Gusev, Alexander Vul"
SeriesNATO Science Series, 3. High Technology, 1388-6576 -- 47, NATO science series -- 47.
ContributionsGusev, Evgeni, Vul", Alexander
The Physical Object
Format[electronic resource] /
Pagination1 online resource (520 pages).
Number of Pages520
ID Numbers
Open LibraryOL27040248M
ISBN 109401150087
ISBN 109789401150088
OCLC/WorldCa840311043

  Medium-energy ion scattering (MEIS) has been used to characterize the composition of ultrathin gate dielectrics. Examples covering investigations on silicon-oxides and oxynitrides as well as high-dielectric constant (high-K) films on silicon substrates are discussed, with special emphasis on understanding film the MEIS spectra obtained from ultrathin films, the signals from different. current, and the need to grow ultrathin and uniform SiO2 layers. This article summarizes recent progress and current sci-entific understanding of ultrathin ~,4nm! SiO2 and Si– O–N gate dielectrics on silicon based devices. ~Si–O–Nwill refer to oxynitride dielectrics for .

Search result for eric-garfunkel: Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators(), Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators(), Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices(), Evolution of Thin-Film and Surface Structure and Morphology: Volume . This article addresses several aspects of nitrogen atom (N atom) incorporation into ultrathin gate oxides including: (i) monolayer incorporation of N atoms at the Si–SiO2 interfaces to reduce tunneling currents and improve device reliability; and (ii) the incorporation of silicon nitride films into stacked oxide–nitride (ON) gate dielectrics to (a) increase the capacitance in ultrathin.

Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals. Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in. 2 gate dielectrics on GaAs. Introduction GaAs-based metal-oxide semiconductor field-effect transistors (MOSFETs) have been a subject of study for several decades [1–18]. GaAs-based de-vices potentially have great advantages over Si-based devices for high-speed and high-power applications, in part from an electron mobility in GaAs.


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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices by Eric Garfunkel Download PDF EPUB FB2

Buy Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices: Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Science Partnership Subseries: 3 Book 47): Read Books Reviews - ufacturer: Springer.

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. Editors The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices.

The contributing authors are leading scientists, drawn from academic. Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (Nato Science Partnership Subseries: 3) [Garfunkel, Eric, Gusev, Evgeni, Vul', Alexander] on *FREE* shipping on qualifying offers.

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (Nato Science Partnership Subseries: 3). Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices.

Editors: Garfunkel, Eric, Gusev the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world.

Buy Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices by Eric Garfunkel, Evgeni Gusev from Waterstones today. Click and Collect from your local Waterstones or get FREE UK delivery on orders over £Book Edition: Softcover Reprint of The Original 1st Ed.

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices.

The contributing authors are leading scientists, drawn from academic, industrial and 4/5(). Buy Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of (Nato Science Partnership Subseries: 3) Softcover reprint of the original 1st ed.

by Garfunkel, Eric, Gusev, Evgeni, Vul', Alexander (ISBN: ) from Amazon's Book Store. Fundamental aspects of ultrathin dielectrics on Si-based devices / edited by Eric Garfunkel, Evgeni Gusev, and Alexander Vul'. Also Titled. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St.

Petersburg, Russia, AugustAuthor. Book Search tips Selecting this option will search all publications across the Scitation platform E. Gusev, and E. Garfunkel, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E.

Garfunkel, E. P in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. Gusev, and A. Lucovsky G. () Spatially-Selective Incorporation of Bonded-Nitrogen into Ultra-Thin Gate Dielectrics by Low-Temperature Plasma-Assisted Processing.

In: Garfunkel E., Gusev E., Vul’ A. (eds) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. NATO Science Series (3. High Technology), vol Springer, Dordrecht. ISBN: OCLC Number: Notes: "Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St.

Petersburg, Russia, August"--Title page verso. Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices / Edition 1 available in Hardcover, Paperback. Add to Wishlist. ISBN ISBN Pub. Date: 03/31/ Publisher: Springer Netherlands. Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices / Edition 1.

by Eric Garfunkel, Evgeni Gusev Price: $ Get this from a library. Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. [Eric Garfunkel; Evgeni Gusev; Alexander Vul'] -- An extrapolation of ULSI scaling trends indicates that minimum feature sizes below mu and gate thicknesses of of ultrathin gate.

Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding. Petersburg, Russia. August 4 - 8, Kluwer Academic Publishers. Dordrecht / Boston / London. Published in cooperation with NATO Scientific Affairs Division. TABLE OF CONTENTS. Preface. Introduction.

The outstanding properties of SiO 2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO 2 interface, which forms the heart of the modern metal-oxide-semiconductor field effect transistor, the building.

This article summarizes recent progress and current scientific understanding of ultrathin (dielectrics on Si based devices.

Book Search tips Selecting this option will search all publications across the Scitation platform in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E Lucovsky and H. Niimi, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E.

Garfunkel, E. Gusev, and A. Vul’, NATO. Improvement of Thin Gate Dielectrics Reliability by High Temperature Oxidation using N2O and O2 Ambient future VLSI devices. Key-Words: gate oxide, time to breakdown, charge to breakdown, SILC, Aspects of Ultrathin Dielectrics on Si-based Devices, [5] L.

Hanetal., “Recent development in ultra thin. Ultrathin (dielectrics made by plasma nitridation of SiO 2 films have been studied by a combination of physical (ellipsometry, Nuclear Reaction Analysis, Medium Energy Ion Scattering, and Atomic Force Microscopy) and electrical (C-V, I-V, and constant voltage stress) methods.

The main observation we report here is a reduction of leakage current in the nitrided oxides at the. Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices Springer Netherlands L C Feldman, E. Gusev, E. Garfunkel (auth.), Eric Garfunkel, Evgeni Gusev, Alexander Vul’ (eds.).

Fundamental aspects of ultrathin dielectrics on Si-based devices By Eric Garfunkel, Evgeni Gusev and Alexander Vul' Topics: Engineering.Lebedev A. A., Chelnokov V. E. "Future trends in SiC-based microelectronic devices", in book Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, E.

Garfunkel et al. (eds), Kluwer Academic Publishers, Printed in the Netherlands (), pp. Feldman, E. P. Gusev, and E. Garfunkel, Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices: Towards an Atomic Scale Understanding, (unpublished), p.